Title :
VCO phase-noise improvement by gate-finger configuration of 0.13-μm CMOS transistors
Author :
Chien-Chih Ho ; Gong-Hao Liang ; Chi-Feng Huang ; Yi-Jen Chan ; Chih-Sheng Chang ; Chih-Ping Chao
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
fDate :
4/1/2005 12:00:00 AM
Abstract :
Using a standard logic process, 0.13-μm RF CMOS devices with multifinger gate structure have been fabricated. The flicker noise and minimum noise figure characteristics have been investigated with different gate layout splits, where the device parasitic resistance is the determining factor in this issue. The stripe-shaped gate configuration demonstrates better noise performance, due to the reduction of device gate resistance. In addition, the MOS varactors designed with different gate layouts were used in a 5.2-GHz voltage-controlled oscillator (VCO) design, where the VCO with the stripe-shaped (2 μm × 36 fingers) gate varactor improved about 6 dB in phase-noise performance at 100-kHz offset frequency than that of square-shaped (8 μm × 9 fingers) gate varactor.
Keywords :
CMOS integrated circuits; MIS devices; MOSFET; flicker noise; microwave oscillators; phase noise; semiconductor device noise; varactors; voltage-controlled oscillators; 0.13 micron; 0.13-/spl mu/m CMOS transistors; 0.13-/spl mu/m RF CMOS device; 100 kHz; 5.2 GHz; 5.2-GHz voltage-controlled oscillator; 6 dB; MOS varactors; MOSFET; VCO phase-noise improvement; device gate resistance; device parasitic resistance; flicker noise; gate layout splits; gate-finger configuration; minimum noise figure; multifinger gate structure; standard logic process; stripe-shaped gate configuration; stripe-shaped gate varactor; 1f noise; CMOS logic circuits; CMOS process; Fingers; Logic devices; Noise figure; Noise reduction; Radio frequency; Varactors; Voltage-controlled oscillators; Flicker noise; MOSFET; phase noise; voltage-controlled oscillator (VCO);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.844700
