Title :
MOSFET 1/f noise model based on mobility fluctuation in linear region
Author :
Xu, Jiansheng ; Deen, M. Jamal
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
4/25/2002 12:00:00 AM
Abstract :
A new 1/f noise model for MOSFETs in the linear region, based on the Hooge mobility fluctuation noise expression, is presented. Simulation results for the new model are in good agreement with experimental results; thus, the new model can be used to predict and estimate the 1/f noise performance for p-MOSFET devices
Keywords :
1/f noise; MOSFET; carrier mobility; fluctuations; semiconductor device models; semiconductor device noise; Hooge parameter; MOSFET 1/f noise model; PMOS transistors; linear region; mobility fluctuation; p-MOSFET devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020282
