Title :
Selective Si interdiffusion into ion implanted GaAs from SiN and its application to GaAs MESFET
Author :
Oh, C.S. ; Seo, J.W. ; Yang, J.W. ; Ahn, H.G. ; Mun, J.K. ; Kim, H.C.
Author_Institution :
Dept. of Semicond. Sci. & Technol., Chonbuk Nat. Univ., Chonju, South Korea
fDate :
4/25/2002 12:00:00 AM
Abstract :
Selective Si interdiffusion into ion implanted GaAs from SiN encapsulation was observed and a GaAs MESFET with a highly conductive layer was developed using the interdiffusion. During the annealing of implanted 29Si at 950°C, Si was selectively diffused into the ion implanted region from SiN encapsulation and formed a highly conductive layer near the surface. The diffused Si improved the ohmic contact resistivity and electrical characteristics of the MESFET
Keywords :
III-V semiconductors; Schottky gate field effect transistors; annealing; chemical interdiffusion; elemental semiconductors; gallium arsenide; ion implantation; silicon; 950 degC; GaAs MESFET; GaAs:Si; SiN; SiN encapsulation; annealing; electrical characteristics improvement; highly conductive layer; implanted Si; ion implanted GaAs; ion implanted region; ohmic contact resistivity improvement; selective Si interdiffusion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020302
