Using Charge Accumulation to Improve the Radiation Tolerance of Multi-Gb NAND Flash Memories

Author

Kay, Matthew J. ; Gadlage, M.J. ; Duncan, Adam R. ; Ingalls, J. David ; Savage, Mark W.

Author_Institution

NSWC Crane, Crane, IN, USA

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4214

Lastpage

4219

Abstract

Consecutive write operations on 42-nm and 60-nm single-level cell (SLC) Samsung NAND flash memories are shown to significantly improve both the total ionizing dose response and the single event upset tolerance of the memory. By writing these SLC flash memories multiple times, more charge is placed on the floating gate. This accumulated charge leads to a larger amount of radiation needed to corrupt the data. The work presented in this paper illustrates a path forward to the development of a multi-gigabit rad-hard non-volatile memory.

Keywords

NAND circuits; flash memories; radiation hardening (electronics); SLC flash memories; charge accumulation; floating gate; multiGb NAND flash memories; multigigabit rad-hard nonvolatile memory; radiation tolerance; single event upset tolerance; single-level cell Samsung NAND flash memories; size 42 nm; size 60 nm; total ionizing dose response; Error analysis; Flash memories; Nonvolatile memory; Radiation effects; Radiation hardening (electronics); Single event upsets; Flash memories; radiation effects; single event effects; total dose effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2284511

Filename

6678296