Title :
SiGe waveguide photodetectors grown by rapid thermal chemical vapour deposition
Author :
Jalali, Bahram ; Levi, A.F.J. ; Ross, F. ; Fitzgerald, E.A.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Epitaxial Si/SiGe quantum well waveguide pin photodiodes are grown using rapid thermal chemical vapour deposition. Devices with area of 10*1000 mu m2 have a measured dark current of less than 10 pA at -5 V bias and an external quantum efficiency of approximately 5% at 1 Gbit/s for incident radiation of wavelength lambda =0.96 mu m.
Keywords :
Ge-Si alloys; chemical vapour deposition; optical interconnections; optical waveguide components; p-i-n diodes; photodiodes; semiconductor epitaxial layers; semiconductor quantum wells; -5 V; 0.96 micron; 1 Gbit/s; 10 micron; 10 pA; 1000 micron; 5 percent; Si-SiGe; SiGe waveguide photodetectors; bias; dark current; external quantum efficiency; quantum well waveguide pin photodiodes; rapid thermal chemical vapour deposition; wavelength;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920166
