• DocumentCode
    746022
  • Title

    Impact ionisation in Si bipolar devices

  • Author

    Herbert, D.C.

  • Author_Institution
    DRA Electron. Div., Malvern, UK
  • Volume
    31
  • Issue
    5
  • fYear
    1995
  • fDate
    3/2/1995 12:00:00 AM
  • Firstpage
    334
  • Lastpage
    335
  • Abstract
    A new theory of impact ionisation recently developed by the author is applied to breakdown in Si p-i-n diodes and collectors of advanced bipolar transistors. Nonlocal aspects dominate the ionisation on short length scales, and good agreement is achieved between the theory and published breakdown and multiplication data
  • Keywords
    bipolar transistors; electric breakdown; elemental semiconductors; impact ionisation; p-i-n diodes; silicon; PIN diodes; Si; Si bipolar devices; bipolar transistor collectors; breakdown; impact ionisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950257
  • Filename
    369976
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=746022