• DocumentCode
    746069
  • Title

    High-Q, Ag-doped 123 resonator on unbuffered sapphire substrate

  • Author

    Easwar, K. ; Sarkar, B.K. ; Kumar, D. ; Hegde, M.S. ; Pinto, R. ; Apte, P.R.

  • Author_Institution
    Soc. for Applied Microwave Electron. Eng. & Res., IIT Campus, Bombay, India
  • Volume
    31
  • Issue
    5
  • fYear
    1995
  • fDate
    3/2/1995 12:00:00 AM
  • Firstpage
    374
  • Lastpage
    375
  • Abstract
    The microwave performance of an Ag-doped YBa2Cu3 O7-x thin-film X-band microstrip resonator on unbuffered sapphire substrate is reported. Q-values of 2400 and 1200 have been obtained at 15 K and 77 K, respectively, which correspond to R s values of 330 μΩ and 680 μΩ
  • Keywords
    Q-factor; barium compounds; high-temperature superconductors; microstrip resonators; sapphire; silver; superconducting microwave devices; superconducting resonators; superconducting thin films; yttrium compounds; 123 compound; 15 K; 330 muohm; 680 muohm; 77 K; Ag-doped YBa2Cu3O7-x thin-film X-band microstrip resonator; Al2O3; Q-values; YBa2Cu3O7:Ag; microwave performance; surface resistance; unbuffered sapphire substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950236
  • Filename
    369985