Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier

Author

Han, Kwangseok ; Gil, Joonho ; Song, Seong-Sik ; Han, Jeonghu ; Shin, Hyungcheol ; Kim, Choong-ki ; Lee, Kwyro

Author_Institution

Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

40

Issue

3

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

726

Lastpage

735

Abstract

Taking a velocity saturation effect and a carrier heating effect in the gradual channel region, complete thermal noise modeling of short-channel MOSFETs including the induced gate noise and its correlation coefficients is presented and verified extensively with experimentally measured data. All of the four noise models have excellently predicted experimental data with maximal error less than 10% for the deep-submicron MOSFETs. Using these models and a simultaneous matching technique for both optimal noise and power, a low noise CMOS amplifier optimized for 5.2-GHz operation has been designed and fabricated. Experiments using an external tuner show that both NF₅₀ and NF_min are very close to 1.1 dB, which is an excellent figure of merit among reported LNAs.

Keywords

CMOS integrated circuits; MOSFET; amplifiers; semiconductor device models; thermal noise; 5.2 GHz; CMOS amplifier; RF CMOS; carrier heating effect; gradual channel region; induced gate noise; low noise amplifier; matching technique; noise correlation coefficients; noise parameters; optimal noise; short-channel MOSFET; thermal noise modeling; velocity saturation effect; Design optimization; Heating; Low-noise amplifiers; MOSFETs; Noise measurement; Operational amplifiers; Predictive models; Semiconductor device modeling; Tuners; Velocity measurement; Four noise parameters; RF CMOS; induced gate noise; low noise amplifier; noise correlation coefficients; thermal noise;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2005.843637

Filename

1408093