Title :
Numerical simulation of trapping effects on drain-current transients of GaAs MESFETs
Author_Institution :
Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya, Japan
Abstract :
Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 s. The currents become constant temporarily at around 10-11 (´quasisteady state´), but decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; electron traps; gallium arsenide; hole traps; semiconductor device models; simulation; transients; GaAs; MESFETs; deep levels; detrapping; drain-current transients; numerical simulation; trapping effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920182
