• DocumentCode
    746268
  • Title

    Numerical simulation of trapping effects on drain-current transients of GaAs MESFETs

  • Author

    Horio, K.

  • Author_Institution
    Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya, Japan
  • Volume
    28
  • Issue
    3
  • fYear
    1992
  • Firstpage
    295
  • Lastpage
    296
  • Abstract
    Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 s. The currents become constant temporarily at around 10-11 (´quasisteady state´), but decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; deep levels; electron traps; gallium arsenide; hole traps; semiconductor device models; simulation; transients; GaAs; MESFETs; deep levels; detrapping; drain-current transients; numerical simulation; trapping effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920182
  • Filename
    121433
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=746268