Title :
A 21-26-GHz SiGe bipolar power amplifier MMIC
Author :
Cheung, Tak Shun Dickson ; Long, John R.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Toronto, Delft, Netherlands
Abstract :
A three-stage 21-26-GHz medium-power amplifier fabricated in fT=120 GHz 0.2 μm SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The differential common-base topology extends the supply to BVCEO of the transistors (1.8 V). New on-chip components, such as onchip interconnects with floating differential shields, and self-shielding four-way power combining/dividing baluns provide inter-stage coupling and single-ended I/O interfaces at the input and output. The 2.45×2.45 mm2 MMIC was mounted as a flipchip and tested without a heatsink.
Keywords :
Ge-Si alloys; MMIC power amplifiers; baluns; bipolar MMIC; flip-chip devices; 0.2 micron; 1.8 V; 120 GHz; 15 dB; 19 dB; 21 to 26 GHz; HBT technology; MMIC power amplifiers; SiGe; bipolar power amplifier; differential common-base topology; flip chip; floating differential shields; medium-power amplifier; microwave power amplifiers; millimeter-wave power amplifiers; monolithic transformer; on-chip interconnects; power combining/dividing baluns; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; MMICs; Power amplifiers; Power generation; Silicon germanium; Testing; Topology; Balun; MMIC power amplifiers; SiGe; SiGe power amplifiers; microwave power amplifiers; millimeter-wave power amplifiers; monolithic transformer; silicon-germanium;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2005.857424
