Title :
Dopant passivation occurring during electron cyclotron resonance (ECR) CH4/H2 dry etching of InGaAs/AlInAs HEMTs
Author :
Ren, F. ; Cho, A.Y. ; Kuo, J.N. ; Pearton, S.J. ; Lothian, J.R. ; Sivco, D.L. ; Wilson, R.G. ; Chen, Y.K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
3/2/1995 12:00:00 AM
Abstract :
Selective dry etching of InGaAs over AlInAs in CH4/H 2-based ECR discharges found to produce extensive hydrogen passivation in the AlInAs donor layer of high electron mobility transistor (HEMT) structures. Hydrogen concentrations of 5×1019 cm-3 are measured in this layer even before complete removal of the overlying InGaAs cap layer. Careful control of over-etch time is necessary to minimise passivation effects on the saturation drain-source current in the InGaAs/AlInAs HEMTs
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; hydrogen; indium compounds; passivation; sputter etching; AlInAs donor layer; ECR CH4/H2 dry etching; H passivation; H2; HEMTs; InGaAs; InGaAs-AlInAs; dopant passivation; electron cyclotron resonance; high electron mobility transistor; over-etch time control; saturation drain-source current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950284
