DocumentCode :
746356
Title :
Current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky barrier diodes
Author :
Pananakakis, G. ; Bauza, D. ; Reeson, K.J. ; Sealy, B.J.
Volume :
28
Issue :
3
fYear :
1992
Firstpage :
296
Lastpage :
298
Abstract :
The current/voltage characteristics of single crystal CoSi2 layers fabricated in
Keywords :
Schottky-barrier diodes; cobalt compounds; electric breakdown of solids; electron-hole recombination; elemental semiconductors; ion implantation; 0.64 eV; 100 to 300 K; 20 V; CoSi 2-Si; Schottky barrier diodes; barrier height; bulk recombination; current/voltage characteristics; high energy ion implantation; ideality factor; ion beam synthesised; mesa device structures; reverse breakdown voltage; single crystal CoSi 2 layers; wet chemical etching;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920183
Filename :
121434
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=746356
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