DocumentCode
746419
Title
"Ramp Differentiation" C(V) Measurement of MOS Structures for Thermally Grown Oxide Quality Analysis
Author
Mitchell, Cheryl Kaufman ; Schmitz, Ronald J.
Volume
14
Issue
2
fYear
1971
fDate
5/1/1971 12:00:00 AM
Firstpage
72
Lastpage
73
Abstract
A new simplified and economical technique, suitable for instructional use, to obtain experimental C(V) plots for MOS structures is described. Comparison of theoretical and experimental C(V) characteristics allows determining the number of excess charges in the thermally grown oxide, serving as an economical quality gauge for the oxide-growing process.
Keywords
Atomic measurements; Capacitance measurement; Capacitance-voltage characteristics; Cities and towns; Extremities; Fabrication; Integrated circuit measurements; Laboratories; Solid state circuits; Voltage;
fLanguage
English
Journal_Title
Education, IEEE Transactions on
Publisher
ieee
ISSN
0018-9359
Type
jour
DOI
10.1109/TE.1971.4320657
Filename
4320657
Link To Document