Title :
"Ramp Differentiation" C(V) Measurement of MOS Structures for Thermally Grown Oxide Quality Analysis
Author :
Mitchell, Cheryl Kaufman ; Schmitz, Ronald J.
fDate :
5/1/1971 12:00:00 AM
Abstract :
A new simplified and economical technique, suitable for instructional use, to obtain experimental C(V) plots for MOS structures is described. Comparison of theoretical and experimental C(V) characteristics allows determining the number of excess charges in the thermally grown oxide, serving as an economical quality gauge for the oxide-growing process.
Keywords :
Atomic measurements; Capacitance measurement; Capacitance-voltage characteristics; Cities and towns; Extremities; Fabrication; Integrated circuit measurements; Laboratories; Solid state circuits; Voltage;
Journal_Title :
Education, IEEE Transactions on
DOI :
10.1109/TE.1971.4320657
