DocumentCode
746656
Title
A novel MESFET fabricated by a simple internal interconnection technique
Author
Dejun, Han ; Chan, K.T. ; GuoHui, Li ; Wenxun, Wang ; Zhu, En-jun
Author_Institution
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
Volume
42
Issue
2
fYear
1995
fDate
2/1/1995 12:00:00 AM
Firstpage
370
Lastpage
372
Abstract
A new type of internal interconnection of devices has been developed by implanting a buried horizontal n+ layer and vertical n+ columns inside semi-insulating GaAs. Based on this technique, a novel MESFET with small intrinsic gate-source resistance has been fabricated and tested
Keywords
III-V semiconductors; Schottky gate field effect transistors; buried layers; gallium arsenide; ion implantation; semiconductor doping; GaAs:Si; MESFET; buried horizontal n+ layer; implantation; internal interconnection technique; intrinsic gate-source resistance; semiinsulating GaAs; vertical n+ columns; Etching; Fabrication; Gallium arsenide; Implants; Integrated circuit interconnections; Integrated circuit technology; MESFETs; Substrates; Testing; Tungsten;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.370051
Filename
370051
Link To Document