DocumentCode
746693
Title
A new approach for modeling of current degradation in hot-electron damaged LDD NMOSFETs
Author
Ytterdal, T. ; Kim, S.-H. ; Lee, K. ; Fjeldly, T.A.
Author_Institution
Dept. of Phys. Electron., Norwegian Inst. of Technol., Trondheim, Norway
Volume
42
Issue
2
fYear
1995
fDate
2/1/1995 12:00:00 AM
Firstpage
362
Lastpage
365
Abstract
An analytical model describing current degradation in hot-electron damaged LDD NMOSFETS is proposed. The basic idea of the model is that the drain current degradation can be explained in terms of an increase in the parasitic resistance only. Good agreement with measured data over at least three decades of stress time is obtained with our model
Keywords
MOSFET; electric current; equivalent circuits; hot carriers; semiconductor device models; LDD NMOSFETs; analytical model; current degradation modelling; drain current; hot-electron damaged MOSFETs; lightly doped drain; parasitic resistance; Annealing; Boron; Circuit synthesis; Degradation; Electron devices; Interface states; MOS devices; MOSFETs; Stress; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.370054
Filename
370054
Link To Document