Title :
A new approach for modeling of current degradation in hot-electron damaged LDD NMOSFETs
Author :
Ytterdal, T. ; Kim, S.-H. ; Lee, K. ; Fjeldly, T.A.
Author_Institution :
Dept. of Phys. Electron., Norwegian Inst. of Technol., Trondheim, Norway
fDate :
2/1/1995 12:00:00 AM
Abstract :
An analytical model describing current degradation in hot-electron damaged LDD NMOSFETS is proposed. The basic idea of the model is that the drain current degradation can be explained in terms of an increase in the parasitic resistance only. Good agreement with measured data over at least three decades of stress time is obtained with our model
Keywords :
MOSFET; electric current; equivalent circuits; hot carriers; semiconductor device models; LDD NMOSFETs; analytical model; current degradation modelling; drain current; hot-electron damaged MOSFETs; lightly doped drain; parasitic resistance; Annealing; Boron; Circuit synthesis; Degradation; Electron devices; Interface states; MOS devices; MOSFETs; Stress; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
