Title :
Metal nanocrystal memory with high-κ tunneling barrier for improved data retention
Author :
Lee, Jong Jin ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
fDate :
4/1/2005 12:00:00 AM
Abstract :
A nonvolatile memory (NVM) with metal nanocrystal (NC) embedded in high-κ dielectrics is proposed. With the larger work function of the metal NC compared to that of silicon NC, the metal NC memory exhibits the better data retention characteristic. The theoretical analysis showing the effect of the electron barrier height on tunneling current density is also presented to support the importance of work function engineering of the NC in NVM structure. The other electrical characteristics such as the programming transient and data endurance are also studied and described in this paper.
Keywords :
current density; nanoelectronics; nanostructured materials; semiconductor storage; tunnelling; work function; data endurance; data retention; electron barrier height; high-κ dielectrics; high-κ tunneling barrier; metal nanocrystal memory; nonvolatile memory; programming transient; silicon nanocrystal; tunneling current density; Dielectrics; Electrons; Hafnium oxide; Nanocrystals; Nickel; Nonvolatile memory; Plasma temperature; Rapid thermal annealing; Silicon; Tunneling; Data endurance; data retention; high-; metal nanocrystal (NC) memory; programming transient;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.844793
