Title :
Forward biased safe operating area of emitter switched thyristors
Author :
Iwamuro, Noriyuko ; Shekar, M.S. ; Baliga, B. Jayant
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
2/1/1995 12:00:00 AM
Abstract :
The physical mechanisms for current saturation and destructive failure of the dual channel emitter switched thyristor (EST) are described. Forward Biased Safe Operating Areas (FBSOAs) at short-circuit state of the 600 V and 2500 V dual channel ESTs are reported. It is demonstrated by numerical simulation that the EST offers a better FBSOA than the IGBT. Experimental measurements are reported that corroborate these calculated results
Keywords :
current density; numerical analysis; semiconductor device models; simulation; thyristors; 2500 V; 600 V; SOA; current saturation; destructive failure; dual channel thyristor; emitter switched thyristors; forward biased safe operating area; numerical simulation; physical mechanisms; short-circuit state; Anodes; Cathodes; Circuits; Insulated gate bipolar transistors; Low voltage; MOSFETs; Numerical simulation; Power semiconductor devices; Protection; Thyristors;
Journal_Title :
Electron Devices, IEEE Transactions on
