Title :
Finite element analysis of Hall effect and magnetoresistance
Author :
Brauer, John R. ; Ruehl, Jeffrey J. ; MacNeal, Bruce E. ; Hirtenfelder, Franz
Author_Institution :
MacNeal-Schwendler Corp., Milwaukee, WI, USA
fDate :
2/1/1995 12:00:00 AM
Abstract :
This paper shows that the finite element method can be used to compute Hall voltages and electric fields, magnetoresistance, and current flow patterns. The computed Hall voltage is reduced (up to 54%) when the semiconductor geometry is changed from a narrow rod to a wide rod and when the sense electrodes are made of nonzero size. Both two-dimensional and three-dimensional geometries are analyzed
Keywords :
Hall effect; electric fields; finite element analysis; magnetoresistance; FEM; Hall effect; Hall voltages; current flow patterns; electric fields; finite element method; magnetoresistance; semiconductor geometry; three-dimensional geometries; two-dimensional geometries; Conductivity; Electrodes; Electrons; Finite element methods; Geometry; Hall effect; Magnetic analysis; Magnetoresistance; Tensile stress; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
