DocumentCode
746784
Title
Frequency-resolved measurements for the characterization of MOSFET parameters at low longitudinal field
Author
Selmi, Luca ; Riccò, Bruno
Author_Institution
Dipartimento di Elettronica, Bologna Univ., Italy
Volume
42
Issue
2
fYear
1995
fDate
2/1/1995 12:00:00 AM
Firstpage
315
Lastpage
320
Abstract
A new technique is presented to extract the main parameters required for transistor modeling at low longitudinal fields (parasitic resistance, intrinsic conductivity factor, threshold voltage, and body factor k) from a single MOSFET. The method makes use of easy-to-perform AC frequency-resolved measurements to overcome repeatability and accuracy problems encountered with DC data. The technique has been satisfactorily validated on MOSFET´s down to 0.8 μm channel length
Keywords
MOSFET; electric variables measurement; semiconductor device testing; 0.8 micron; AC frequency-resolved measurements; MOSFET parameters; body factor; characterization; frequency-resolved measurements; intrinsic conductivity factor; low longitudinal field; parameter extraction; parasitic resistance; threshold voltage; transistor modeling; Conductivity measurement; Data mining; Electrical resistance measurement; Frequency measurement; Gallium arsenide; Helium; Immune system; MESFETs; MOSFET circuits; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.370063
Filename
370063
Link To Document