Title :
A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications
Author :
Yeh, Chih-Chieh ; Wang, Tahui ; Tsai, Wen-Jer ; Lu, Tao-Cheng ; Chen, Ming-Shiang ; Liao, Yi-Ying ; Ting, WenChi ; Ku, Yen-Hui Joseph ; Lu, Chih-Yuan
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
4/1/2005 12:00:00 AM
Abstract :
A novel programming by hot-hole injection nitride electron storage (PHINES) Flash memory technology is developed. The memory bit size of 0.046 μm2 is fabricated based on 0.13-μm technology. PHINES cell uses a nitride trapping storage cell structure. Fowler-Nordheim (FN) injection is performed to raise Vt in erase while programming is done by lowering a local Vt through band-to-band tunneling-induced hot hole (BTBT HH) injection. Two-bits-per-cell feasibility, low-power and high-speed program/erase, good endurance and data retentivity make it a promising candidate for Flash EEPROM technology in gigabit era applications.
Keywords :
flash memories; high-speed integrated circuits; hot carriers; integrated circuit technology; low-power electronics; 0.13 micron; Fowler-Nordheim injection; PHINES flash memory cell; band-to-band hot hole; band-to-band tunneling; charge gain; charge loss; data storage applications; flash EEPROM technology; high-speed program-erase; hot-hole injection nitride electron storage; low power program-erase; nitride trapping storage cell; over-erasure; small pitch; Channel hot electron injection; EPROM; Electron traps; Flash memory; Flash memory cells; Hot carriers; Nonvolatile memory; SONOS devices; Scalability; Tunneling; Band-to-band hot hole (BTB HH); EEPROM; Flash memory; Flash memory cell; charge gain; charge loss; nitride storage; over-erasure;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.845085
