A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications

Author

Yeh, Chih-Chieh ; Wang, Tahui ; Tsai, Wen-Jer ; Lu, Tao-Cheng ; Chen, Ming-Shiang ; Liao, Yi-Ying ; Ting, WenChi ; Ku, Yen-Hui Joseph ; Lu, Chih-Yuan

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

52

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

541

Lastpage

546

Abstract

A novel programming by hot-hole injection nitride electron storage (PHINES) Flash memory technology is developed. The memory bit size of 0.046 μm² is fabricated based on 0.13-μm technology. PHINES cell uses a nitride trapping storage cell structure. Fowler-Nordheim (FN) injection is performed to raise V_t in erase while programming is done by lowering a local V_t through band-to-band tunneling-induced hot hole (BTBT HH) injection. Two-bits-per-cell feasibility, low-power and high-speed program/erase, good endurance and data retentivity make it a promising candidate for Flash EEPROM technology in gigabit era applications.

Keywords

flash memories; high-speed integrated circuits; hot carriers; integrated circuit technology; low-power electronics; 0.13 micron; Fowler-Nordheim injection; PHINES flash memory cell; band-to-band hot hole; band-to-band tunneling; charge gain; charge loss; data storage applications; flash EEPROM technology; high-speed program-erase; hot-hole injection nitride electron storage; low power program-erase; nitride trapping storage cell; over-erasure; small pitch; Channel hot electron injection; EPROM; Electron traps; Flash memory; Flash memory cells; Hot carriers; Nonvolatile memory; SONOS devices; Scalability; Tunneling; Band-to-band hot hole (BTB HH); EEPROM; Flash memory; Flash memory cell; charge gain; charge loss; nitride storage; over-erasure;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.845085

Filename

1408156