A novel nanoscaled device concept: quasi-SOI MOSFET to eliminate the potential weaknesses of UTB SOI MOSFET

For the first time, a novel device concept of a quasi-silicon-on-insulator (SOI) MOSFET is proposed to eliminate the potential weaknesses of ultrathin body (UTB) SOI MOSFET for CMOS scaling toward the 35-nm gate length, and beyond. A scheme for fabrication of a quasi-SOI MOSFET is presented. The key characteristics of quasi-SOI are investigated by an extensive simulation study comparing them with UTB SOI MOSFET. The short-channel effects can be effectively suppressed by the insulator surrounding the source/drain regions, and the suppression capability can be even better than the UTB SOI MOSFET, due to the reduction of the electric flux in the buried layer. The self-heating effect, speed performance, and electronic characteristics of quasi-SOI MOSFET with the physical channel length of 35 nm are comprehensively studied. When compared to the UTB SOI MOSFET, the proposed device structure has better scaling capability. Finally, the design guideline and the optimal regions of quasi-SOI MOSFET are discussed.