Title :
Monolithic CCD imagers in HgCdTe
Author :
Wadsworth, Mark V. ; Borrello, Sebastian R. ; Dodge, John ; Gooch, Roland ; McCardel, William ; Nado, George ; Shilhanek, Michael D.
Author_Institution :
Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
fDate :
2/1/1995 12:00:00 AM
Abstract :
Charge-coupled device (CCD) infrared detector arrays in 5 μm cutoff HgCdTe have been demonstrated for low background applications. These fully monolithic 128 by 28 element CCD arrays incorporate time-delay-and-integrate (TDI) detection, serial readout multiplexing, charge-to-voltage conversion and buffer amplification in the HgCdTe detector chip. Operation of these devices at 77 K have produced average detectivity values exceeding 3×1013 cm-Hz1/2/W for a background flux level of 6×1012 photon/cm2-sec in the 3.0 μm to 5.5 μm spectral band. Overall performance data indicates the monolithic HgCdTe CCD to be a promising alternative to present midwave infrared hybrid focal plane array technology
Keywords :
CCD image sensors; II-VI semiconductors; cadmium compounds; infrared detectors; infrared imaging; mercury compounds; 3 to 5.5 micron; 77 K; HgCdTe; IR detector chip; buffer amplification; charge-coupled device; charge-to-voltage conversion; infrared detector arrays; low background applications; monolithic CCD imagers; serial readout multiplexing; time delay/integrate detection; Charge coupled devices; Diodes; Doping; Infrared detectors; Infrared imaging; Integrated circuit interconnections; MISFETs; Parasitic capacitance; Radiation detectors; Sensor arrays;
Journal_Title :
Electron Devices, IEEE Transactions on
