Title :
Direct measurement of the carrier leakage out of the active region in InGaAsP/InP laser heterostructures
Author :
Belenky, Gregory L. ; Kazarinov, R.F. ; Lopata, John ; Luryi, Serge ; Tanbun-Elk, T. ; Garbinski, P.A.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
2/1/1995 12:00:00 AM
Abstract :
Leakage of electrons out of the active region of InGaAsP/InP laser heterostructures at different temperatures was measured by a purely electrical method. Comparison of the obtained results with the results of modeling indicates that special attention should be paid to the acceptor doping levels in the p cladding layer immediately adjacent the active region. Lower acceptor concentration may lead to unacceptably high thermionic leakage
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser variables measurement; semiconductor lasers; thermionic electron emission; InGaAsP-InP; acceptor concentration; acceptor doping levels; active region; carrier leakage; direct measurement; electrical method; laser heterostructures; p cladding layer; thermionic leakage; Charge carrier processes; Diode lasers; Electric variables measurement; Electron emission; Indium phosphide; Laser modes; Optical design; Surface emitting lasers; Temperature dependence; Thermionic emission;
Journal_Title :
Electron Devices, IEEE Transactions on
