Title :
Field-plate engineering for HFETs
Author :
Karmalkar, Shreepad ; Shur, Michael S. ; Simin, Grigory ; Khan, M.Asif
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Madras, India
Abstract :
This paper reports on the analytical approach for designing field plates for reducing the electric field in the channel and at the surface of heterostructure field-effect transistors (HFETs) for a given drain voltage, with the smallest possible increase of the gate capacitance. The analytical calculations for GaN-based HFETs are in good agreement with the two-dimensional numerical simulations.
Keywords :
III-V semiconductors; capacitance; electric fields; gallium compounds; high electron mobility transistors; numerical analysis; plates (structures); semiconductor device models; GaN; HFET; channel; drain voltage; electric field reduction; field plate engineering; gate capacitance; heterostructure field effect transistor; numerical simulation; Capacitance; Dielectric constant; Dielectrics and electrical insulation; Doping; HEMTs; Helium; MODFETs; Numerical simulation; Polarization; Voltage; Analytical modeling; field plate; heterostructure field effect transistor (HFET);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.859568
