High speed non-selfaligned GaInP/GaAs-TEBT

Tunnelling emitter bipolar transistors (TEBTs) with a 10 nm GaInP layer between emitter and base acting as a hole repelling potential barrier in the valence band have been fabricated from MOCVD grown Ga_0.5In_0.5P/GaAs layer structures. The carbon doped base layer (11011 nm, 6.5*10¹⁹ cm^-3) exhibits a base sheet resistance of 100 Omega / Square Operator . DC and RF characterisation of a non-selfaligned GaAs asymmetric TEBT with f_T>40 GHz and f_max>90 GHz are reported.