DocumentCode
747177
Title
A 3-D model for concentrator solar cells based on distributed circuit units
Author
Galiana, Beatriz ; Algora, Carlos ; Rey-Stolle, Ignacio ; Vara, Ivan Garcíia
Author_Institution
Dept. de Electron. Fisica, Univ. Politecnica de Madrid, Spain
Volume
52
Issue
12
fYear
2005
Firstpage
2552
Lastpage
2558
Abstract
A three-dimensional (3-D) distributed model for high-concentrator solar cells based on elementary units made up of electrical circuits is presented. The recombination mechanisms are dealt with in detail, paying special attention to the perimeter properties. No ohmic effect is omitted making this a powerful simulation tool for concentrator solar cells. A shunt resistance is also included. The model allows the simulation of the external connections and nonuniform illumination profiles making this model very useful for optimizing future structures and technological processes. The proposed 3-D model is compared with a lumped, two-diode model in the simulation of a GaAs solar cell operating from 1 to 2000 suns. It is found that the 3-D distributed model agrees satisfactorily with the experimental data for all concentrations. The agreement cannot be made simultaneously for both low and high concentrations for the lumped model.
Keywords
III-V semiconductors; electronic engineering computing; gallium arsenide; modelling; solar cells; 3D distributed model; GaAs; concentrator solar cells; distributed circuit units; external connections simulation; nonuniform illumination profiles; perimeter properties; recombination mechanisms; Circuit simulation; Contact resistance; Electric resistance; Gallium arsenide; Lighting; Mechanical factors; Photovoltaic cells; Photovoltaic systems; Solar power generation; Voltage; Gallium compounds; modeling; photovoltaic (PV) cells;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2005.859620
Filename
1546315
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