DocumentCode :
747255
Title :
Comparison of device performance of highly strained Ga1-xInxAs/Al0.48In0.52As (0.53
Author :
Chang, T.Y. ; Feuer, Mark D. ; Lalevic, B.
Volume :
28
Issue :
3
fYear :
1992
Firstpage :
329
Lastpage :
330
Abstract :
A series of 1.3 mu m gate length Ga1-xInxAs/Al0.48In0.52As MODFETs covering a wide range of x values in the channel (0.53or=0.77) has been successfully fabricated and compared. Although the maximum values of transconductance (1010 mS/mm), saturated drain current density (920 mA/mm), and room-temperature mobility are obtained with x=0.85, lower x values of 0.77-0.80 are found to offer the highest 77 K mobility and the best cutoff-frequency-gate-length product.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; high electron mobility transistors; indium compounds; 1.3 micron; Ga 1-xIn xAs-Al 0.48In 0.52As; III-V semiconductors; MODFETs; cutoff-frequency-gate-length product; device performance; gate length; room-temperature mobility; saturated drain current density; strain compensation; transconductance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19920204
Filename :
121455
Link To Document :
