DocumentCode
747263
Title
NBTI degradation and its impact for analog circuit reliability
Author
Jha, Neeraj K. ; Reddy, P. Sahajananda ; Sharma, Dinesh K. ; Rao, V. Ramgopal
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol. Mumbai, India
Volume
52
Issue
12
fYear
2005
Firstpage
2609
Lastpage
2615
Abstract
A methodology to quantify the degradation at circuit level due to negative bias temperature instability (NBTI) has been proposed in this work. Using this approach, a variety of analog/mixed-signal circuits are simulated, and their degradation is analyzed. It has been shown that the degradation in circuit performance is mainly dependent on the circuit configuration and its application rather than the absolute value of degradation at the device level. In circuits such as digital-to-analog converters, NBTI can pose a serious reliability concern, as even a small variation in bias currents can cause significant gain errors.
Keywords
analogue integrated circuits; circuit simulation; integrated circuit reliability; mixed analogue-digital integrated circuits; thermal stability; NBTI degradation; analog circuit reliability; analog/mixed-signal circuits; bias current; circuit configuration; circuit lifetime; circuit performance; digital-to-analog converters; gain error; negative bias temperature instability; pMOSFET degradation; threshold-voltage shift; Analog circuits; Annealing; Degradation; Digital circuits; MOSFET circuits; Niobium compounds; Stress; Temperature; Titanium compounds; Voltage; Analog/mixed-signal circuits; circuit lifetime; negative bias temperature instability (NBTI); pMOSFET degradation; threshold-voltage shift;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2005.859570
Filename
1546322
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