• DocumentCode
    747263
  • Title

    NBTI degradation and its impact for analog circuit reliability

  • Author

    Jha, Neeraj K. ; Reddy, P. Sahajananda ; Sharma, Dinesh K. ; Rao, V. Ramgopal

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. Mumbai, India
  • Volume
    52
  • Issue
    12
  • fYear
    2005
  • Firstpage
    2609
  • Lastpage
    2615
  • Abstract
    A methodology to quantify the degradation at circuit level due to negative bias temperature instability (NBTI) has been proposed in this work. Using this approach, a variety of analog/mixed-signal circuits are simulated, and their degradation is analyzed. It has been shown that the degradation in circuit performance is mainly dependent on the circuit configuration and its application rather than the absolute value of degradation at the device level. In circuits such as digital-to-analog converters, NBTI can pose a serious reliability concern, as even a small variation in bias currents can cause significant gain errors.
  • Keywords
    analogue integrated circuits; circuit simulation; integrated circuit reliability; mixed analogue-digital integrated circuits; thermal stability; NBTI degradation; analog circuit reliability; analog/mixed-signal circuits; bias current; circuit configuration; circuit lifetime; circuit performance; digital-to-analog converters; gain error; negative bias temperature instability; pMOSFET degradation; threshold-voltage shift; Analog circuits; Annealing; Degradation; Digital circuits; MOSFET circuits; Niobium compounds; Stress; Temperature; Titanium compounds; Voltage; Analog/mixed-signal circuits; circuit lifetime; negative bias temperature instability (NBTI); pMOSFET degradation; threshold-voltage shift;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2005.859570
  • Filename
    1546322