DocumentCode :
74727
Title :
Endurance Improvement Technology With Nitrogen Implanted in the Interface of 
Resistance Switching Device
Author :
Yong-En Syu ; Rui Zhang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Kuan-Chang Chang ; Jen-Chung Lou ; Tai-Fa Young ; Jung-Hui Chen ; Min-Chen Chen ; Ya-Liang Yang ; Chih-Cheng Shih ; Tian-Jian Chu ; Jian-Yu Chen ; Chih-Hung Pan ; Yu-Ting Su ; Hui-Chun Huang ;
Author_Institution :
Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Volume :
34
Issue :
7
fYear :
2013
fDate :
Jul-13
Firstpage :
864
Lastpage :
866
Abstract :
Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.
Keywords :
circuit reliability; electrochemical electrodes; fracture; ion implantation; platinum; random-access storage; titanium compounds; tungsten compounds; Pt-WSiOx-WSiON-TiN; RRAM; conduction filament; double-layer memory structure; electrode; nitrogen implantation; nonvolatile memory; oxygen-confining layer; random diffusing oxygen ion surpassing; reliability; resistance random access memory; resistance switching device; tungsten silicon oxide; Nonvolatile memory; resistance switching; tungsten silicon oxide $({rm WSiO}_{bf x})$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2260125
Filename :
6519267
Link To Document :
