Title :
A new and improved physics-based model for MOS transistors
Author_Institution :
North Carolina State Univ., Raleigh, NC, USA
Abstract :
An improved MOS device model is derived based upon a first-order model for the dependency of MOS surface mobility on surface field and lateral drain field. A comparison with experimental data shows that a consistent set of physical parameters can be used to describe both long-channel nMOS devices and short-channel devices. The model can form the basis for improved compact MOS models for circuit analysis.
Keywords :
MOSFET; differential equations; semiconductor device models; MIS devices; MOS device model; MOS surface mobility; MOS transistors; MOSFET; circuit analysis; field-effect transistors; first-order model; lateral drain field; long-channel nMOS device; physical parameter; physics-based model; semiconductor device modeling; short-channel device; surface field; Circuit analysis; Differential equations; FETs; MIS devices; MOS devices; MOSFETs; Physics; Semiconductor device modeling; Surface treatment; Voltage; Field-effect transistors (FETs); MIS devices; MOSFETs; modeling; semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.859623
