Title :
An asymmetric two-side program with one-side read (ATPOR) device for MultiBit per cell MLC nitride-trapping flash memories
Author :
Wu, Jau-Yi ; Lee, Ming-Hsiu ; Hsu, Tzu-Hsuan ; Kuo, Ming-Chang ; Lung, Hsiang-Lan ; Liu, Rich ; Lu, Chih-Yuan
Author_Institution :
Emerging Central Lab., Macronix Int. Co. Ltd. Hsinchu, Taiwan
Abstract :
An asymmetric two-side program with one-side read (ATPOR) Flash memory device is proposed. In this nitride-trapping device, the interaction of stored charges in the two sides (second-bit effect) is utilized to achieve multilevel cell (MLC) Vt levels with the advantages of relatively small total charge. The small total charge can enhance both programming and erasing efficiency. The ATPOR device with programming and erasing times within 100 ns and 40 μs are demonstrated. Excellent read disturb immunity of ATPOR device can provide high scaling capability. In addition, good data retention and P/E cycling endurance and reliability are achieved. For 2-bit/cell and 3-bit/cell MLC applications, the ATPOR device with tight level distributions less than 100 mV is illustrated.
Keywords :
flash memories; read-only storage; 100 ns; 40 mus; ATPOR device; ATPOR flash memory device; P/E cycling endurance; asymmetric two-side program with one-side read device; data retention; erasing time; multilevel cell; nitride-trapping device; nitride-trapping flash memory; programming times; second-bit effect; stored charges; Channel hot electron injection; Fabrication; Flash memory; Heart; Hot carriers; Lungs; Nonvolatile memory; Threshold voltage; 2-bit/cell; 3-bit/cell; Nitride-trapping device; multilevel cell (MLC); second-bit effect;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.859665
