Title :
Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain
Author :
Palestri, Pierpaolo ; Esseni, David ; Eminente, Simone ; Fiegna, Claudio ; Sangiorgi, Enrico ; Selmi, Luca
Author_Institution :
DIEGM, Univ. of Udine, Italy
Abstract :
In this paper, and in Part II, Monte Carlo (MC) simulations including quantum corrections to the potential and calibrated scattering models are used to study electronic transport in bulk and double-gate silicon-on-insulator MOSFETs with LG down to 14-nm designed according to the 2003 International Technology Roadmap for Semiconductors. Simulations with and without scattering are used to assess the influence of quasi-ballistic transport on the MOSFET on-current. We analyze in detail the flux of back-scattered carriers. The role of scattering in different parts of the device is clarified and the MC results are compared to simple models for quasi-ballistic transport presented in the literature.
Keywords :
MOSFET; Monte Carlo methods; ballistic transport; electron backscattering; nanotechnology; semiconductor device models; silicon-on-insulator; Monte Carlo method; backscattered carriers; electronic transport; nanoMOSFET; quantum corrections; quasi ballistic transport; scattering models; semiconductor device modeling; silicon on insulator; Analytical models; Ballistic transport; Electrons; MOSFETs; Monte Carlo methods; Nanoscale devices; Particle scattering; Quantization; Quantum computing; Silicon on insulator technology; Back-scattering; MOSFETs; Monte Carlo (MC) method; ballistic transport; semiconductor device modeling; silicon-on-insulator (SOI);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.859593
