DocumentCode
747562
Title
Measuring the effective channel length of MOSFETs
Author
Ng, Kwok K. ; Brews, John R.
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
Volume
6
Issue
6
fYear
1990
Firstpage
33
Lastpage
38
Abstract
Eleven measurement methods are outlined, and their assumptions are examined. The methods are analyzed, critiqued, and compared. Recommendations are made as to which methods are best under various conditions.<>
Keywords
insulated gate field effect transistors; semiconductor device testing; MOSFETs; effective channel length; measurement methods; Design engineering; Equations; Etching; Length measurement; Lithography; MOSFETs; Manufacturing processes; Monitoring; Surface resistance; Voltage;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.100256
Filename
100256
Link To Document