Title :
Improved capacitance measurements with respect to a 1-pF cross-capacitor from 200 to 2000 Hz
Author :
Wang, Yicheng ; Shields, Scott H.
Author_Institution :
Quantum Electr. Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fDate :
4/1/2005 12:00:00 AM
Abstract :
This paper describes frequency dependence measurements of fused-silica capacitance standards from 200 to 2000 Hz, using a 1-pF cross-capacitor as the reference. The measured frequency dependence of fused-silica capacitors was found to vary significantly, ranging from a change of less than 0.2 μF/F for one standard to a change of 0.8 μF/F for another over the frequency range. Increasing capacitances with decreasing frequency from 1592 Hz for all tested fused-silica capacitors indicates that dielectric relaxation due to dielectric bulk and/or interfacial defects is the dominant source of frequency dependence. The relative combined standard uncertainty at 200 Hz (the largest in the frequency range) is 0.07 μF/F, which is smaller by about a factor of three than the uncertainty reported previously from the National Institute of Standards and Technology (NIST).
Keywords :
capacitance measurement; capacitors; dielectric relaxation; measurement standards; measurement uncertainty; 1 pF; 200 to 2000 Hz; National Institute of Standards and Technology; capacitance measurements; dielectric bulk; dielectric relaxation; frequency dependence measurements; fused-silica capacitance standards; interfacial defects; standard uncertainty; Bridge circuits; Calibration; Capacitance measurement; Capacitors; Dielectrics; Electrodes; Frequency dependence; Frequency measurement; NIST; Quantum capacitance; Capacitance; cross-capacitor; farad; frequency dependence; fused-silica capacitor;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.2004.843317