Preparation and Temperature Cycling Reliability of Electroless Ni(P) Under Bump Metallization

Author

Chen, Weimin ; McCloskey, Paul ; Rohan, James F. ; Byrne, Patrick ; McNally, Patrick J.

Author_Institution

Intel, Shanghai

Volume

30

Issue

1

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

144

Lastpage

151

Abstract

The reliability of electroless Ni(P) under-bump metallization (UBM) was evaluated via temperature cycling and solder bump shear strength tests. Commercial diodes and dummy dies fabricated in-house were used as substrates for the electroless Ni(P) UBM deposition. Solder bumps were formed after reflowing eutectic 63Sn37Pb solder foils over the Ni(P) UBM. The solder bump shear strength was measured before and after different temperature cycling. The results from this study showed that the UBM thickness and dimension had important effects on the solder bump shear strength and reliability. Both the larger UBM dimension and larger UBM thickness tended to induce higher stress in the UBM, which resulted in the lower solder bump shear strength and lower temperature cycling reliability. A better UBM structure solution for high current electronic packaging application is indicated in this paper

Keywords

electroless deposition; metallisation; nickel alloys; reflow soldering; reliability; shear strength; solders; thermal management (packaging); tin alloys; NiP; SnPb; electroless Ni(P) under bump metallization; high current electronic packaging; reflowing eutectic 63Sn37Pb solder foils; solder bump shear strength tests; temperature cycling reliability; Current density; Electromigration; Electronic packaging thermal management; Electronics packaging; Integrated circuit interconnections; Metallization; Temperature; Testing; Thermal management; Thermal resistance; Electroless Ni(P) deposition; electronic packaging; reliability; shear strength test; solder bump; thermal cycling; under-bump metallization (UBM);

fLanguage

English

Journal_Title

Components and Packaging Technologies, IEEE Transactions on

Publisher

ieee

ISSN

1521-3331

Type

jour

DOI

10.1109/TCAPT.2007.892094

Filename

4135412