DocumentCode :
747923
Title :
Steps toward a capacitance standard based on single-electron counting at PTB
Author :
Scherer, Hansjörg ; Lotkhov, Sergey V. ; Willenberg, Gerd-Dietmar ; Zorin, Alexander B.
Author_Institution :
Phys.-Technische Bundesanstalt, Braunschweig, Germany
Volume :
54
Issue :
2
fYear :
2005
fDate :
4/1/2005 12:00:00 AM
Firstpage :
666
Lastpage :
669
Abstract :
A capacitance standard based on the definition of capacitance C=Ne/U is realized if a capacitor is charged with a known number N of electrons (e is the elementary charge), and the voltage U across the capacitor is measured . If U is measured by means of a Josephson voltage standard, C is solely determined by quantum numbers and fundamental constants. Presently, Physikalisch-Technische Bundesanstalt (PTB) is setting up this experiment using a special type of single-electron pump, the so-called r-pump , for transferring electrons one by one onto a cryogenic vacuum capacitor with the decadic capacitance C =1 pF. We report on the progress in the setup with emphasis on the characterization of the single-electron tunneling elements. We describe the modifications of the single-electron circuit that are necessary to implement the capacitor charging experiment by using a four- or five-junction r-pump.
Keywords :
capacitance measurement; cryogenic electronics; measurement standards; single electron transistors; tunnelling; 1 pF; Josephson voltage standard; PTB; Physikalisch-Technische Bundesanstalt; capacitance standard; capacitor charging; charge transfer; cryogenic electronics; cryogenic vacuum capacitor; decadic capacitance; fundamental constants; quantum numbers; single-electron circuit; single-electron counting; single-electron pump; single-electron tunneling; thin-film devices; tunnel transistors; Capacitance measurement; Capacitors; Charge measurement; Cryogenics; Current measurement; Electrons; Measurement standards; Quantum capacitance; Tunneling; Voltage; Capacitance; charge transfer; cryogenic electronics; current; quantization; thin-film devices; tunnel transistors; tunneling;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2004.843075
Filename :
1408259
Link To Document :
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