Title :
Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz
Author :
Klinger, S. ; Berroth, M. ; Kaschel, M. ; Oehme, M. ; Kasper, E.
Author_Institution :
Inst. of Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Stuttgart, Germany
fDate :
7/1/2009 12:00:00 AM
Abstract :
Fast Ge-on-Si p-i-n photodiodes are fabricated and their frequency response is measured up to 67 GHz at a wavelength of 1550 nm. At a bias voltage of -2 V, a 3-dB bandwidth (BW) of 49 GHz is achieved. This is to the best of the authors´ knowledge the highest BW ever published for Ge photodiodes.
Keywords :
elemental semiconductors; germanium; optical fabrication; optical variables measurement; p-i-n photodiodes; Ge-Si; PD fabrication; bandwidth 49 GHz; frequency response measurement; p-i-n photodiode; voltage -2 V; wavelength 1550 nm; Ge p-i-n photodiodes; high bandwidth (BW); molecular beam epitaxy;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2020510
