DocumentCode :
748108
Title :
1.55- 
m VCSEL With Enhanced Modulation Bandwidth and Temperature Range
Author :
Hofmann, W. ; Müller, M. ; Böhm, G. ; Ortsiefer, M. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Volume :
21
Issue :
13
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
923
Lastpage :
925
Abstract :
InP-based vertical-cavity surface-emitting lasers (VCSELs) at 1.55-mum emission wavelength with improved modulation bandwidth and temperature behavior are demonstrated. Utilizing an improved active region, thermal design, and reduced chip parasitics, a superior modulation-bandwidth >10 GHz is achieved up to 85degC. The new VCSEL device is compared in detail with our reference design, analyzing all bandwidth-limiting elements. With their improved temperature range at invariant output power and minimal threshold change with temperature these VCSELs are especially qualified for uncooled operation in passive optical networks. Potential bit rates of 12.5 or even 17 Gb/s are expected with this kind of devices for cost-effective 100-G Ethernet solutions at metro-range.
Keywords :
III-V semiconductors; indium compounds; laser beams; laser cavity resonators; optical fibre LAN; optical modulation; surface emitting lasers; Ethernet; InP; VCSEL device; bit rate 12.5 Gbit/s; bit rate 17 Gbit/s; enhanced modulation bandwidth; passive optical network; vertical-cavity surface-emitting laser; wavelength 1.55 mum; InP; optical communications; semiconductor lasers; vertical-cavity surface-emitting laser (VCSEL);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2020605
Filename :
4838806
Link To Document :
