DocumentCode :
748197
Title :
Gallium arsenide solar cell radiation damage study
Author :
Maurer, R.H. ; Herbert, G.A. ; Kinnison, J.D. ; Meulenberg, A.
Author_Institution :
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
Volume :
36
Issue :
6
fYear :
1989
fDate :
12/1/1989 12:00:00 AM
Firstpage :
2083
Lastpage :
2091
Abstract :
A thorough analysis has been made of electron- and proton- damaged GaAs solar cells suitable for use in space. It is found that, although some electrical parametric data and spectral response data are quite similar, the type of damage due to the two types of radiation is different. An I-V analysis model shows that electrons damage the bulk of the cell and its currents relatively more, while protons damage the junction of the cell and its voltages more. It is suggested that multiple defects due to protons in a strong field region such as a p/n junction cause the greater degradation in cell voltage, whereas the individual point defects in the quasi-neutral minority-carrier-diffusion regions due to electrons cause the greater degradation in cell current and spectral response
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; point defects; proton effects; semiconductor device testing; solar cells; GaAs solar cell radiation damage; I-V analysis model; cell current; electron damage; p-n junctions; point defects; proton damage; quasi-neutral minority-carrier-diffusion regions; semiconductor; spectral response data; Electrons; Gallium arsenide; Laboratories; Manufacturing; Photovoltaic cells; Physics; Protons; Silicon; Space missions; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.45408
Filename :
45408
Link To Document :
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