Analysis of current-mirror MOSFETs for use in total-dose radiation environments

Author

Martinez, M.J. ; Schrimpf, R.D. ; Galloway, K.F.

Author_Institution

Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2099

Lastpage

2103

Abstract

The suitability of current-mirror MOSFETs (CMFETs) for use in total-dose radiation environments was examined. These devices allow low-loss load-current sensing and have significant potential for use in power integrated circuits. Experiments demonstrated that the ratio of the load current to the sense current was virtually unaffected by ionizing radiation for many operating conditions. In all cases examined, changes in current ratio were largest when the sense resistance was largest, and smallest when the sense voltage was approximately equal to the load-section source voltage. A demonstration circuit was used to verify the feasibility of using feedback to extend the useful life of CMFETs in total-ionizing-dose environments

Keywords

insulated gate field effect transistors; power transistors; radiation effects; semiconductor device testing; current mirror MOSFET; feedback; ionizing radiation; load current sense current ratio; load-section source voltage; low-loss load-current sensing; power integrated circuits; sense resistance; total-dose radiation environments; Circuit testing; FETs; Feedback circuits; Ionizing radiation; MOSFETs; Power dissipation; Power integrated circuits; Resistors; Semiconductor optical amplifiers; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45410

Filename

45410