DocumentCode :
748335
Title :
Short circuit behavior of IGBTs correlated to the intrinsic device structure and on the application circuit
Author :
Letor, Romeo ; Aniceto, Giovanni Candeloro
Author_Institution :
Discrete & Stand. IC´´s Group, SGS-Thomson Microelectron., Catania, Italy
Volume :
31
Issue :
2
fYear :
1995
Firstpage :
234
Lastpage :
239
Abstract :
Problems associated with the short circuit tolerance of power control circuits can be solved successfully using IGBTs as power switches even when the intrinsic short circuit performance of these devices is modest. The protection circuit of an IGBT with modest short circuit capability is more critical then the protection circuit of a rugged IGBT. On the other hand, IGBTs with the best short circuit performance have the higher operating losses due to their higher saturation voltage. This note demonstrates how the IGBTs and the protection circuit were optimized to get the best trade-off between efficiency, ruggedness, and reliability of the application
Keywords :
insulated gate bipolar transistors; power control; power semiconductor switches; protection; short-circuit currents; IGBT; application circuit; efficiency; intrinsic device structure; operating losses; power control circuits; power switches; protection circuit; reliability; ruggedness; saturation voltage; short circuit behavior; Circuit simulation; Circuit testing; Delay; Inductance; Insulated gate bipolar transistors; Power control; Power system protection; Short circuit currents; Switching circuits; Voltage;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/28.370268
Filename :
370268
Link To Document :
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