Title :
Integrated silicon optical receiver with avalanche photodiode
Author :
Csutak, S.M. ; Schaub, J.D. ; Wang, S. ; Mogab, J. ; Campbell, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
fDate :
6/17/2003 12:00:00 AM
Abstract :
An optical receiver consisting of an avalanche photodiode integrated with a transimpedance amplifier is reported. The optical receiver was fabricated on a 2 μm thick SOI substrate in a 130 nm unmodified CMOS process flow. The unity gain external quantum efficiency of the photodetectors was ∼10% at 850 nm. Optimum sensitivity was achieved for an avalanche gain M=8. This gain accounted for 5 dB improvement in receiver sensitivity at 2 Gbit/s. Operation at 8 Gbit/s was achieved only when the photodetector was biased in the avalanche gain regime.
Keywords :
CMOS integrated circuits; avalanche photodiodes; integrated optoelectronics; optical receivers; photodetectors; silicon-on-insulator; 130 nm; 2 Gbit/s; 2 micron; 8 Gbit/s; 850 nm; CMOS process flow; SOI substrate; avalanche gain regime biasing; avalanche photodiode; integrated silicon optical receiver; optimum sensitivity; photodetectors; receiver sensitivity; transimpedance amplifier; unity gain external quantum efficiency;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030391
