Title :
Radiation effects on ion-implanted silicon-dioxide films
Author :
Kato, Masataka ; Watanabe, Kikuo ; Okabe, Takeaki
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
12/1/1989 12:00:00 AM
Abstract :
The effects of radiation on SiO2 films implanted with high ion doses are studied. The interface-state buildup is suppressed by the ion-implanted oxide. The amount of suppression depends on the ion dose, the gate bias during irradiation, and the annealing atmosphere. A radiation-hardening technique for field oxide is proposed, using the ion-implanted oxide. Radiation-induced interface-state density is suppressed by one order of magnitude using arsenic implantation. By applying this technique to a conventional bipolar process, current gain reduction is suppressed to within 10% after 106 rad(SiO2 ) irradiation
Keywords :
arsenic; insulated gate field effect transistors; ion implantation; metal-insulator-semiconductor devices; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; silicon compounds; Si-SiO2:As; SiO2 films; annealing atmosphere; bipolar process; current gain reduction; effects of radiation; field oxide; gate bias; high ion doses; interface-state buildup; ion-implanted oxide; radiation-hardening technique; Aluminum; Bipolar transistors; Degradation; Electron traps; Fabrication; MOS capacitors; Radiation effects; Semiconductor films; Simulated annealing; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
