• DocumentCode
    74842
  • Title

    Large-Signal Performance and Modeling of Intrinsically Switchable Ferroelectric FBARs

  • Author

    Seungku Lee ; Lee, Victor ; Sis, Seyit Ahmet ; Mortazawi, Amir

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Univ. of Michigan at Ann Arbor, Ann Arbor, MI, USA
  • Volume
    61
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    415
  • Lastpage
    422
  • Abstract
    This paper presents the large-signal performance of intrinsically switchable ferroelectric thin-film bulk acoustic resonators (FBARs), as well as their modeling procedure. There has been a growing interest in ferroelectric FBARs due to their electric-field-dependent permittivity and electric-field-induced piezoelectricity. Ferroelectric barium-strontium-titanate (BaxSr(1-x)TiO3) FBARs are intrinsically switchable, namely, they have resonances that switch on with the application of a dc-bias voltage. In this paper, the large-signal performance and nonlinear behavior of ferroelectric BST FBARs are investigated. Measurement results show that the device nonlinearity can be reduced by applying higher dc-bias voltages. Moreover, a large-signal model that accurately describes the dc-bias voltage, as well as RF power-dependent performance of BST FBARs is developed. Large-signal simulation results obtained from this model at different bias voltages and RF power levels show good agreement with the measurement results.
  • Keywords
    acoustic resonators; ferroelectric devices; semiconductor device models; BaSrTiO3; RF power-dependent performance; bulk acoustic resonators; dc-bias voltage; electric-field-dependent permittivity; electric-field-induced piezoelectricity; intrinsically switchable ferroelectric thin-film FBAR modeling; large-signal model; large-signal performance; large-signal simulation; Film bulk acoustic resonators; Integrated circuit modeling; Mathematical model; Power measurement; Radio frequency; Resonant frequency; Voltage measurement; Electrostriction; ferroelectric devices; film bulk acoustic resonators (FBARs); large-signal modeling; nonlinear systems;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2012.2225442
  • Filename
    6361250