Title :
Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides
Author :
Porti, M. ; Nafria, M. ; Aymerich, X. ; Cester, A. ; Paccagnella, A. ; Cimino, S.
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Spain
Abstract :
In this work, the electrical conduction of irradiated thin SiO2 gate oxides of MOS structures has been analyzed at a nanometer scale with a Conductive Atomic Force Microscope (C-AFM). The results have been compared to those obtained on fresh and electrically stressed oxides, demonstrating the capability of the technique to evaluate the electrical damage induced during irradiation.
Keywords :
MIS structures; atomic force microscopy; electric breakdown; electrical conductivity; nanostructured materials; radiation effects; semiconductor device reliability; silicon compounds; MOS structures; SiO2; conductive atomic force microscope; electrical conduction; electrical damage; electrically stressed oxides; irradiated thin SiO2 gate oxides; nanometer scale; semiconductor device reliability; Atomic force microscopy; Atomic measurements; Degradation; Dielectric breakdown; Dielectric devices; MOS devices; Scanning electron microscopy; Spatial resolution; Testing; Tunneling; Atomic force microscopy; MOS devices; dielectric breakdown; dielectric radiation effects; gate dielectric; semiconductor device reliability;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.855647
