Long-wavelength InP-based quantum-dash lasers

Author

Schwertberger, R. ; Gold, D. ; Reithmaier, J.P. ; Forchel, A.

Author_Institution

Technische Phys., Wurzburg Univ., Germany

Volume

14

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

735

Lastpage

737

Abstract

Self-assembled InAs quantum-dash (QD) lasers with emission wavelengths between 1.54 and 1.78 μm based on the AlGaInAs-AlInAs-InP material system were grown by gas source molecular beam epitaxy. Threshold current densities below 1 kA/cm² were achieved for 1-mm-long mirror coated broad area lasers with a stack of four QD layers. The devices can be operated up to 80/spl deg/C in pulsed mode and show a high T₀ value of 84 K up to 35/spl deg/C. In comparison to quantum-well lasers a much lower temperature sensitivity of the emission wavelength was achieved. The temperature shift of /spl Delta//spl lambda///spl Delta/T = 0.12 nm/K is as low as that caused by the refractive index change.

Keywords

III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; current density; gallium arsenide; indium compounds; quantum well lasers; self-assembly; semiconductor quantum dots; 1.54 to 1.78 micron; 15 to 80 C; AlGaInAs-AlInAs-InP; AlGaInAs-AlInAs-InP material system; InP; QD layer stack; emission wavelength temperature sensitivity; emission wavelengths; gas source molecular beam epitaxy; mirror coated broad area lasers; pulsed mode; refractive index change; self-assembled InAs quantum-dash lasers; self-organized growth; temperature shift; threshold current densities; Gas lasers; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Temperature sensors; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1003076

Filename

1003076