• DocumentCode
    74869
  • Title

    2-W Broadband GaN Power-Amplifier RFIC Using the f_{T} Doubling Technique and Digitally Assisted Distortion Cancellation

  • Author

    El-Gabaly, Ahmed M. ; Stewart, Darryl ; Saavedra, Carlos E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Queen´s Univ., Kingston, ON, Canada
  • Volume
    61
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    525
  • Lastpage
    532
  • Abstract
    The method of derivative superposition is enhanced with digital techniques to cancel the intermodulation distortion generated by a 2-W power amplifier (PA) RF integrated circuit over a broad band of 6 GHz. Two amplifiers were fabricated and tested: a baseline PA without distortion cancellation and a PA with digitally assisted distortion cancellation to demonstrate the effectiveness of the new technique. The PAs are biased in class-A mode and have an OP1dB of 31 dBm and a PSAT of 33 dBm. Measurements reveal that the output third-order intercept point (OIP3) of the PA with digitally assisted distortion cancellation can be increased to 50.25±3.75 dBm between 1-6 GHz relative to the OIP3 of the baseline PA, which is 40.25±2.75 dBm over the same frequency span. The level of distortion cancellation is not only dependent on the frequency of the incident signal, but also on its power level. Data is presented that shows how the proposed digitally assisted distortion cancellation method also improves the OIP3 of the PA when the RF input power level is taken into account.
  • Keywords
    III-V semiconductors; UHF integrated circuits; UHF power amplifiers; frequency multipliers; gallium compounds; interference suppression; intermodulation distortion; microwave integrated circuits; microwave power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; OIP3; PA RF integrated circuit; broadband power-amplifier RFIC; digitally assisted distortion cancellation method; frequency 1 GHz to 6 GHz; frequency doubling technique; intermodulation distortion; output third-order intercept point; power 2 W; Frequency measurement; Gallium nitride; Logic gates; Microcontrollers; Power measurement; Transistors; Voltage measurement; Digitally assisted RF circuits; RF integrated circuit (RFIC); distortion cancellation; gallium–nitride (GaN); power amplifiers (PAs);
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2012.2225637
  • Filename
    6361251