• DocumentCode
    748703
  • Title

    Improvements of resonance characteristics due to thermal annealing of Bragg reflectors in ZnO-based FBAR devices

  • Author

    Kim, Dong-Hyun ; Yim, Munhyuk ; Chai, Dongkyu ; Yoon, Giwan

  • Author_Institution
    Sch. of Eng., Inf. & Commun. Univ., Yusong, South Korea
  • Volume
    39
  • Issue
    13
  • fYear
    2003
  • fDate
    6/26/2003 12:00:00 AM
  • Firstpage
    962
  • Lastpage
    964
  • Abstract
    The effects of thermal annealing of W/SiO2 multilayer Bragg reflectors on the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices are presented for the first time. The resonance characteristics could be significantly improved due to thermal annealing. FBAR devices with Bragg reflectors annealed at 400°C/30 min show excellent resonance characteristics in terms of return loss and Q-factor.
  • Keywords
    Q-factor; acoustic resonance; acoustic resonator filters; acoustic resonators; acoustic wave reflection; annealing; bulk acoustic wave devices; losses; silicon compounds; tungsten; zinc compounds; 30 min; 400 degC; Q-factor; W-SiO2; W/SiO2 multilayer Bragg reflectors; ZnO; ZnO-based FBAR devices; bulk acoustic resonator devices; duplexers; filters; resonance characteristics; return loss; thermal annealing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030638
  • Filename
    1214781
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=748703