Title :
Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs
Author :
Mérelle, Thomas ; Saigné, F. ; Sagnes, B. ; Gasiot, G. ; Roche, Ph. ; Carrière, T. ; Palau, M.-C. ; Wrobel, F. ; Palau, J.-M.
Author_Institution :
Central R&D, STMicroelectronics, Crolles, France
Abstract :
This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.
Keywords :
Monte Carlo methods; SRAM chips; neutron effects; Los Alamos neutron facility; Monte-Carlo simulations; SEU; SRAM; diffusion; neutron-induced multiple bit upsets; single event upsets; Alpha particles; Atmospheric modeling; CMOS technology; Computational modeling; Error correction; Error correction codes; Neutrons; Random access memory; Research and development; Single event upset; Bulk; Monte-Carlo; SEU; SRAM; diffusion; multiple bit upsets (MBU); neutron;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.855823
