Title :
Polarization-insensitive SOA with a strained bulk active layer for network device application
Author :
Itoh, M. ; Shibata, Y. ; Kakitsuka, T. ; Kadota, Y. ; Tohmori, Y.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
6/1/2002 12:00:00 AM
Abstract :
Current and wavelength characteristics for 1.55-μm semiconductor optical amplifiers (SOAs) containing bulk active layers with various tensile strains were investigated. The strain dependence of the gain-difference between the TE-mode and TM-mode (/spl Delta/G/sub TE-TM/) was almost linear having a waveguide-width over 0.8-1.5 μm. A -0.12% tensile-strained bulk SOA had very low /spl Delta/G/sub TE-TM/ of less than 0.8 dB for driving current ranging from 0 to 120 mA. The low-polarization-sensitive condition of SOAs with strained-bulk active layers was shown to yield very wide range in driving current and wavelength for network device applications.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; internal stresses; laser modes; light polarisation; optical information processing; semiconductor optical amplifiers; 0 to 120 mA; 1.55 micron; InGaAsP; InGaAsP active layers; TE-mode TM-mode gain-difference; all-optical networks; current characteristics; driving current; low-polarization-sensitive condition; network device application; polarization-insensitive SOA; semiconductor optical amplifiers; strain dependence; strained bulk active layer; tensile strains; wavelength characteristics; Capacitive sensors; Epitaxial growth; Optical polarization; Optical sensors; Optical signal processing; Optical waveguides; Quantum well devices; Semiconductor optical amplifiers; Tellurium; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.1003086
